DMN2991UFB4-7B

$0.22

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:5ce259cc2509 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.28 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：14.6 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMN2991UFB4-7B

Overview

The DMN2991UFB4-7B is a 20V N-channel enhancement mode MOSFET in an X2-DFN1006-3 package. It features a maximum drain-source voltage of 20V and continuous drain current ratings of 0.5A at 25°C and 0.4A at 70°C. The on-resistance is specified as 0.99Ω max at VGS=4.5V, 1.2Ω max at VGS=2.5V, and 1.8Ω max at VGS=1.8V. Total gate charge is 0.28nC typ. Operating temperature range spans -55°C to +150°C.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features a footprint of just 0.6mm², which is thirteen times smaller than SOT23 packages.
Includes an internal ESD protected gate with a low gate threshold voltage for fast switching speeds.

Applications

Load switches
High-efficiency power-management applications

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm that the component meets RoHS 2/3 compliance and is halogen and antimony free. Ensure the application design accounts for the thermal resistance characteristics provided in the datasheet for steady-state and pulsed conditions.

Selection Notes

Select this component when board space is constrained due to its ultra-small X2-DFN1006-3 footprint. Consider the device for low-voltage applications requiring fast switching and low gate charge. Evaluate the on-resistance specifications against the specific gate drive voltages available in the target circuit to ensure adequate current handling capabilities.

Part Context

This part belongs to the DMN2991 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series focuses on providing low on-resistance within a compact form factor suitable for portable and space-sensitive electronic designs.

Replacement Considerations

Consult the official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pinouts and electrical parameters carefully before implementation.