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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X2-DFN0604-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：21.5 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：440mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0604-3
- Package / Case：3-XFDFN
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Overview
The DMN2991UFO-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 20 V and a maximum gate-source voltage (V_GS) of ±8 V. The device provides a continuous drain current (I_D) of 0.54 A at +25°C, with a static drain-source on-resistance (R_DS(ON)) of 0.99 Ω max at V_GS = 4.5 V. Total gate charge (Q_g) is 0.35 nC max. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance.
- Features a very low gate threshold voltage of 1.0 V max for enhanced switching performance.
- Includes an ESD protected gate structure for improved reliability.
- Compliant with RoHS directives and halogen/antimony free.
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm packaging details. Confirm that the X2-DFN0604-3 package dimensions match the design requirements. Ensure compliance with moisture sensitivity level 1 per J-STD-020 standards during handling.
Selection Notes
Select this component for low-voltage, low-current switching applications requiring minimal footprint. Evaluate thermal resistance characteristics for PCB layout optimization. Consider the low gate charge for high-frequency operation needs. Verify compatibility with available gate drive voltages given the low threshold specification.
Part Context
This part belongs to the DMN2991 series of N-channel enhancement mode MOSFETs. It utilizes the X2-DFN0604-3 case style, which offers a compact 0.6mm x 0.4mm footprint. The series is designed to balance low on-resistance with superior switching performance for portable and battery-powered devices.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified equivalents. Cross-reference pin configurations and electrical parameters carefully when considering alternative manufacturers.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (V_GS) rating is ±8 V.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q qualification, contact Diodes Incorporated directly as standard parts may not meet these specific criteria.
