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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70pC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：15.6pF @ 16V
- Power - Max：380mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：X2-DFN1010-6 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMN2992UDR4-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device offers low on-state resistance, with RDS(ON) values ranging from 0.45Ω to 2.4Ω depending on the gate drive voltage and current conditions. Continuous drain current (ID) is rated at 0.5A at +25°C. It operates within a temperature range of -55°C to +150°C and is housed in an X2-DFN1010-6 package.
Feature Summary
- Dual N-channel configuration designed for high-efficiency power management applications
- Low on-state resistance combined with fast switching speed capabilities
- ESD protected gate structure with low input/output leakage characteristics
- Totally lead-free and fully RoHS compliant construction
Applications
- Power-management functions
- Backlighting circuits
- Load switches
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 5000-unit tape and reel packaging format. Confirm that the X2-DFN1010-6 package dimensions align with the target PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 standards during storage and handling procedures.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. Evaluate the thermal resistance parameters against the expected power dissipation levels. Consider the gate threshold voltage specifications to ensure compatibility with the intended control logic signals.
Part Context
This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated. It utilizes the X2-DFN1010-6 package type, designated as Type UXC in the datasheet. The product represents a newer generation design focused on minimizing on-state resistance while maintaining superior switching performance.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure pinout and electrical parameter compatibility.
