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The DMN2992UFA-7B is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20 V drain-source breakdown voltage and a continuous drain current of 450 mA. The device exhibits a maximum on-resistance of 990 mOhms at a gate-source voltage of 10 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation of 350 mW. The component utilizes an X2-DFN0606-3 surface-mount package.
Verify the specific suffix against official Diodes Incorporated documentation to confirm pinout and electrical characteristics. Ensure the ordering part number matches the required package type and tape-and-reel specifications. Cross-reference datasheet revisions to validate performance parameters before integration into final designs.
Select this component when a compact dual N-channel solution is required for low-voltage signal paths. Compare the 990 mOhm on-resistance against system loss requirements. Evaluate the X2-DFN0606-3 footprint compatibility with existing PCB layouts and thermal management strategies.
This component belongs to the DMN2992 series of dual MOSFETs from Diodes Incorporated. The series provides integrated solutions for applications requiring multiple switching elements in a minimal footprint, supporting modern miniaturization trends in consumer electronics and industrial control systems.
Consult official substitution guides for verified alternatives. Verify that any substitute maintains identical pin configurations and electrical ratings to ensure direct compatibility without circuit redesign.