DMN2992UFB4Q-7B

$0.19

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9d3eceac40be Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：830mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.41 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：15.6 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：380mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMN2992UFB4Q-7B

Overview

The DMN2992UFB4Q-7B is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 package with a footprint of 0.6mm² and a profile of 0.4mm. The device provides a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 0.83A at +25°C. Static drain-source on-resistance (RDS(ON)) is rated at 0.99Ω at VGS = 4.5V, 1.2Ω at VGS = 2.5V, and 1.8Ω at VGS = 1.8V. Total gate charge (Qg) is 0.41nC.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features a low gate threshold voltage and fast switching speed suitable for compact designs.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Suitable for automotive applications requiring specific change control; AEC-Q101 qualified and PPAP capable.

Applications

Load switches
High-efficiency power-management applications

Procurement Notes

Verify the complete part number including the -7B suffix to confirm tape and reel packaging quantities. Confirm that the X2-DFN1006-3 package dimensions align with the PCB pad layout requirements. Ensure the selected component meets the required thermal dissipation characteristics for the intended operating environment.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SOT23 packages. Consider the low gate threshold voltage for compatibility with lower drive voltages. Evaluate the thermal resistance values against the expected power dissipation in the target application to ensure reliable operation within the specified temperature range.

Part Context

This component belongs to the DMN2992 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance in ultra-small packages. The DMN2992UFB4Q variant specifically utilizes the X2-DFN1006-3 package to achieve a minimal profile and footprint.

Replacement Considerations

Check datasheets for alternative MOSFETs with matching 20V BVDSS and similar RDS(ON) specifications. Verify pinout compatibility and package dimensions before substitution. Ensure any replacement also meets AEC-Q101 qualification if used in automotive contexts.

FAQ

Is the DMN2992UFB4Q-7B suitable for automotive applications?

Yes, the part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.