Single FETs, MOSFETs DMN2992UFO-7R product image

DMN2992UFO-7R

$0.03
  • Description:LINEAR IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:884218387bd0 Category: Brand:

  
  • Quantity
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DMN2992UFO-7R is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is LINEAR IC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2992UFO-7R

  • Description:LINEAR IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:530mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:410 pC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:15.6 pF @ 16 V
  • FET Feature:-
  • Power Dissipation (Max):420mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:X2-DFN0604-3
  • Package / Case:3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN2992UFO-7R

DMN2992UFO-7R

Single FETs, MOSFETs Overview

The DMN2992UFO-7R is an N-channel MOSFET manufactured by Diodes Incorporated, designed for surface-mount applications. It features a breakdown voltage (BVDSS) range of 8V to 24V and is housed in an X2-DFN0604-3 package. The device supports a continuous drain current of 530mA at ambient temperature and offers a power dissipation capacity of 420mW at ambient temperature. This component is supplied in tape and reel packaging with a quantity of 10,000 units per reel.

Single FETs, MOSFETs Feature Summary

  • Utilizes a compact X2-DFN0604-3 surface-mount package for space-constrained designs.
  • Provides enhanced thermal performance through the exposed pad design of the DFN package.
  • Engineered for low-voltage switching applications within the specified breakdown voltage range.

Single FETs, MOSFETs Applications

  • Low-voltage DC-DC converter circuits
  • Load switching in portable electronic devices
  • Battery protection and management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific electrical characteristics against the official Diodes Incorporated datasheet prior to integration. Confirm that the X2-DFN0604-3 footprint matches your PCB layout requirements. Ensure compliance with RoHS directives as indicated in the product documentation. Validate thermal management strategies given the 420mW power dissipation rating.

Single FETs, MOSFETs Selection Notes

Select this component when a small form factor is required for low-voltage switching tasks. The 530mA current rating suits moderate load applications. Consider the thermal resistance of the X2-DFN0604-3 package for heat dissipation needs. Compare against other Diodes Incorporated MOSFETs if higher current or voltage ratings are necessary for the target circuit.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on providing efficient switching solutions for consumer electronics and industrial control applications. The DMN2992UFO variant specifically targets ultra-small footprint requirements while maintaining reliable performance in low-voltage environments.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement maintains compatibility with the X2-DFN0604-3 package dimensions and pinout configuration. Verify that alternative components meet or exceed the original voltage and current specifications.

DMN2992UFO-7RDMN2992UFO-7R
$0.03
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