DMN29M9UFDF-13

$0.12

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0e57b6c61f30 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN29M9UFDF-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 25V~30V U-DFN2020-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN29M9UFDF-13

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：13.5mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.6 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：655 pF @ 8 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN29M9UFDF-13

DMN29M9UFDF-13

Single FETs, MOSFETs Overview

The DMN29M9UFDF-13 is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) package. It features a maximum drain-source breakdown voltage of 20V and a continuous drain current of 11A at +25°C. The device offers a low on-resistance of 13.5mΩ max at VGS=4.5V and 15.5mΩ max at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.5V to 1.2V, total gate charge of 7.3nC at VGS=4.5V, and operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Features a 0.6mm profile ideal for low profile applications with a PCB footprint of 4mm².
Includes ESD protected gate structure.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Single FETs, MOSFETs Applications

General Purpose Interfacing Switch
Power Management Functions
Load Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets all applicable environmental directives including RoHS 2 and RoHS 3 compliance standards before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. Ensure the application voltage does not exceed the 20V drain-source rating. Consider the thermal characteristics and junction-to-ambient resistance values if operating near the maximum temperature limits or under high load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the U-DFN2020-6 form factor. The product is designed for general purpose interfacing and power management applications requiring efficient switching capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's datasheet for equivalent circuits and pinout compatibility when considering substitutes. Verify that any replacement part matches the 20V BVDSS, U-DFN2020-6 package dimensions, and electrical characteristics such as RDS(ON) and gate threshold voltage ranges.