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Product Detailed Parameters
- Description：MOSFET N-CH 30V 17.6A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：17.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3690 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3008SFG-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum drain-source breakdown voltage (BVDSS) of 30V, a continuous drain current (ID) of up to 62A at TC = +25°C, and a static drain-source on-resistance (RDS(ON)) of 4.4mΩ at VGS = 10V. The device features a total gate charge (Qg) of 86nC at VGS = 10V and meets AEC-Q101 automotive reliability standards.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Utilizes a thermally efficient PowerDI3333-8 package that occupies only 33% of the board area compared to SO-8 packages.
- Qualified to AEC-Q101 standards for high reliability in demanding environments.
- Subjected to 100% Unclamped Inductive Switch (UIS) testing during production.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm compliance with RoHS 2/3 directives and ensure the component matches the required PowerDI3333-8 footprint. Cross-reference the datasheet revision number against the manufacturer's official documentation to validate all electrical characteristics before integration.
Selection Notes
Select this component when low conduction losses are critical due to its sub-5mΩ RDS(ON). The small form factor supports higher density designs where space is constrained. Ensure the application requires an N-channel enhancement mode device capable of handling high pulsed currents up to 150A. Verify thermal management requirements align with the specified junction-to-ambient resistance values.
Part Context
This part belongs to the DMN3008SFG series of N-channel MOSFETs from Diodes Incorporated. It shares the same core die and electrical specifications as the DMN3008SFG-7 variant, differing primarily in the factory packaging quantity. Both variants utilize the identical PowerDI3333-8 case and are designed for similar high-efficiency switching applications.
Replacement Considerations
The DMN3008SFG-7 is a direct functional substitute with identical electrical ratings and package dimensions, differing only in the reel quantity (2,000 units versus 3,000 units).
