DMN3008SFGQ-7

$0.28

Description：MOSFET N-CH 30V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a76c1f083ec6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17.6A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.4mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3690 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3008SFGQ-7

Overview

The DMN3008SFGQ-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of up to 62A at TC = +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 4.4mΩ max at VGS = 10V and 5.5mΩ max at VGS = 4.5V. Packaged in a PowerDI3333-8 surface-mount format, it supports an operating temperature range from -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications with PPAP capability
Low RDS(ON) minimizes on-state power losses
PowerDI3333-8 package provides high thermal efficiency and density
100% unclamped inductive switching (UIS) tested in production

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against your manufacturing requirements, as they indicate different packing quantities per reel. Confirm that the component meets all applicable RoHS and halogen-free directives required by your supply chain compliance protocols before finalizing procurement orders.

Selection Notes

Select this component when designing for automotive environments requiring AEC-Q101 qualification and PPAP support. Evaluate the 4.4mΩ RDS(ON) at VGS=10V for optimal efficiency in standard drive conditions, while considering the 5.5mΩ rating if utilizing lower gate drive voltages such as 4.5V.

Part Context

This part belongs to the DMN3008 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the PowerDI3333-8 package technology, which occupies significantly less board area compared to traditional SO-8 packages while maintaining robust thermal performance suitable for compact electronic designs.