DMN3009LFVQ-13

$0.24

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9317c8de8e63 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

Download product information

DMN3009LFVQ-13

Overview

The DMN3009LFVQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and operates within a junction temperature range of -55°C to +150°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 5.5mΩ at VGS=10V with a continuous drain current (ID) of 60A, or 9.0mΩ at VGS=4.5V with an ID of 50A. Total gate charge (Qg) is 42nC at VGS=10V. It utilizes the PowerDI3333-8 package.

Feature Summary

Low RDS(ON) ensures minimized on-state losses for improved efficiency.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
Suitable for automotive applications requiring specific change control.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify that the ordering suffix matches the required packaging quantity, as the datasheet specifies distinct quantities for different suffixes. Confirm AEC-Q101 qualification and PPAP capability requirements are met for your specific automotive application needs before finalizing procurement.

Selection Notes

Select this component when a compact footprint is critical, as it occupies significantly less board area than traditional SO-8 packages. Ensure the design accommodates the thermal characteristics provided for both minimum pad layouts and thermal bias conditions to maximize power dissipation capabilities.

Part Context

This part belongs to the DMN3009LFV series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically to meet stringent automotive industry standards, including AEC-Q101 qualification and PPAP support. The device is manufactured in IATF 16949 certified facilities.

Replacement Considerations

DMN3009LFV-7

FAQ

Is the DMN3009LFVQ-13 suitable for automotive applications?

Yes, the DMN3009LFVQ is qualified to AEC-Q101, supported by a PPAP, and is manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.