DMN3009LFVQ-7

$0.25

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:49ee7b423c0e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN3009LFVQ-7

Overview

The DMN3009LFVQ-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 (Type UX) packaging and meets AEC-Q101 automotive qualification standards with PPAP capability. The device features a maximum drain-source voltage of 30V, a continuous drain current of 60A at +25°C case temperature, and a static drain-source on-resistance of 5.5mΩ at VGS=10V. Total gate charge is 42nC at VGS=10V.

Feature Summary

Low RDS(ON) minimizes on-state power losses
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Totally lead-free & fully RoHS compliant

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm that the component carries the necessary automotive certifications for your target application. Ensure that the manufacturer's quality documentation aligns with your supply chain requirements before finalizing procurement.

Selection Notes

Select this component when low on-state resistance and high current handling are critical within a compact footprint. Consider the thermal performance characteristics provided in the datasheet to ensure adequate heat dissipation under expected operating conditions. Verify compatibility with standard PCB pad layouts for the PowerDI3333-8 package.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent reliability requirements. It is manufactured in IATF 16949 certified facilities and supports specific change control protocols. The device is suitable for applications requiring robust performance in demanding environments.