DMN3009LFVWQ-7

$0.33

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:26a744f16f74 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN3009LFVWQ-7

Overview

The DMN3009LFVWQ-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package and meets AEC-Q101 automotive qualification standards with PPAP capability. Key electrical parameters include a drain-source breakdown voltage of 30V, a continuous drain current of 60A at TC=25°C, and a maximum on-resistance of 5.0mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes conduction losses for improved efficiency
PowerDI3333-8 package provides high thermal efficiency in a small form factor
Occupies significantly less board area compared to traditional SO-8 packages
Manufactured in IATF 16949 certified facilities for automotive reliability

Applications

Automotive backlighting systems
DC-DC converters
General power management functions

Procurement Notes

Verify that the specific ordering suffix matches the required packaging quantity. Confirm that the component meets the necessary automotive quality standards if used in safety-critical circuits. Ensure compatibility with the intended PCB layout dimensions for the PowerDI3333-8 package before finalizing procurement decisions.

Selection Notes

Select this component when low on-resistance and compact footprint are critical design constraints. Consider the thermal resistance characteristics relative to the expected ambient operating conditions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching performance.

Part Context

This part belongs to the DMN3009LFV series of N-channel MOSFETs designed for automotive applications. It shares the same core die and electrical specifications as other variants in the family but differs in packaging configuration and reel quantities based on the specific ordering suffix.