DMN3009SFG-13

$0.25

Description：MOSFET N-CH 30V 16A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a253a39b0ea8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 16A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3009SFG-13

Overview

The DMN3009SFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 surface-mount package and operates with a drain-source voltage of 30V. The device provides a maximum continuous drain current of 45A at case temperature +25°C, with an on-resistance of 5.5mΩ at VGS=10V and 9mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1V to 2.5V, total gate charge of 42nC at VGS=10V, and a junction-to-ambient thermal resistance of 137°C/W. It supports an operating temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features low input capacitance and low on-resistance characteristics.
Undergoes 100% unclamped inductive switching (UIS) testing in production to ensure reliability.

Applications

Power Management Functions
DC-DC Converters
Battery Systems

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance standards and is halogen-free if required by your design specifications. Ensure compatibility with the PowerDI3333-8 footprint during PCB layout validation.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. Consider the 30V breakdown voltage and 45A current capability relative to your load requirements. Evaluate the thermal resistance values against your expected ambient temperatures and heat dissipation capabilities to ensure safe operation within the specified junction temperature limits.

Part Context

This part belongs to the DMN3009 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the PowerDI3333-8 package, which is designed for efficient thermal management and small form factor implementations. The series is intended for general-purpose switching applications requiring robust performance in power conversion circuits.

Replacement Considerations

The datasheet lists the DMN3009SFGQ as an automotive-compliant alternative under a separate document. Verify pinout compatibility and electrical parameter equivalence before substituting with other 30V N-channel MOSFETs in the PowerDI3333-8 package.

FAQ

Is the DMN3009SFG-13 qualified for automotive applications?

No, this specific part number is not automotive-grade. For automotive applications requiring AEC-Q100/101 qualification, the DMN3009SFGQ variant should be used.