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Product Detailed Parameters
- Description：MOSFET N-CH 30V 16A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3009SFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 30V and a gate-source voltage of ±20V. At VGS=10V, the maximum on-resistance is 5.5mΩ with a continuous drain current of 45A at TC=+25°C. At VGS=4.5V, the resistance is 9mΩ with a current of 30A. Total gate charge is 42nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Verified through 100% unclamped inductive switching (UIS) testing in production to ensure robust end application reliability.
- Qualified to JEDEC standards for high reliability and available as an automotive-compliant part under separate datasheet.
Applications
- Power Management Functions
- DC-DC Converters
- Battery Systems
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The '-7' suffix indicates a tape and reel packaging quantity of 2,000 units. Confirm that the required component matches the standard commercial grade specifications rather than the automotive-grade variant, which carries a distinct 'Q' suffix and requires reference to a separate datasheet.
Selection Notes
Select this component when low input capacitance and minimized on-resistance are critical for high-efficiency designs. Ensure the thermal environment accommodates the specified junction-to-ambient resistance values. Verify that the gate drive voltage meets the requirements for optimal RDS(ON) performance at either 4.5V or 10V levels.
Part Context
This component belongs to the DMN3009 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is housed in the PowerDI3333-8 case, utilizing a molded plastic green molding compound with matte tin annealed terminals over a copper leadframe. The device is fully RoHS compliant and halogen-free.
Replacement Considerations
The DMN3009SFGQ-7 is the automotive-compliant alternative within the same family. Verify if AEC-Q100 qualification or IATF 16949 manufacturing certification is required for the target application before substituting.
