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Product Detailed Parameters
- Description：MOSFET N-CH 30V 16A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3009SFGQ-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package and meets AEC-Q101 automotive qualification standards with PPAP capability. The device features a maximum drain-source breakdown voltage of 30V, a gate-source voltage rating of ±20V, and a continuous drain current of up to 45A at TC = +25°C. Static drain-source on-resistance is specified as 5.5mΩ max at VGS = 10V and 9mΩ max at VGS = 4.5V. Total gate charge reaches 42nC at VGS = 10V.
Feature Summary
- Qualified for automotive applications requiring specific change control
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Power management functions
- DC-DC converters
- Batteries
Procurement Notes
Verify that the ordering suffix matches the required packaging quantity, such as -7 for 2,000 units per tape and reel or -13 for 3,000 units. Confirm compliance with automotive quality requirements including PPAP submission if applicable to the production line. Ensure the component is sourced from authorized channels to guarantee authenticity and adherence to IATF 16949 manufacturing standards.
Selection Notes
Select this component when a low-profile surface-mount solution is required for 30V DC power switching applications. The PowerDI3333-8 package provides efficient thermal dissipation through an exposed drain pad. Verify that the system gate drive voltage supports the specified on-resistance thresholds at either 4.5V or 10V logic levels.
Part Context
This part belongs to the DMN3009 series of N-channel enhancement mode MOSFETs designed for high-efficiency power switching. It is engineered specifically for automotive environments, offering robust performance under varying temperature conditions ranging from -55°C to +150°C junction temperature.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified equivalent parts within the same family or alternative packages that maintain identical electrical parameters and automotive qualification status.
