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Product Detailed Parameters
- Description：MOSFET N-CH 30V 11A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2075 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3010LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and utilizes the POWERDI3333-8 surface-mount package. The device provides a continuous drain current of 11A at an ambient temperature of +25°C, increasing to 30A when mounted on a case at +25°C. Static drain-source on-resistance is specified at 8.5mΩ with a gate-source voltage of 10V, and 10.5mΩ at 4.5V. Total gate charge reaches 37nC at 10V.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features a small form factor thermally efficient package that occupies just 33% of the board area compared to SO-8 packages.
- Rated for 100% Unclamped Inductive Switching (UIS) and 100% Rg testing to ensure reliability.
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The -7 suffix indicates a standard tape and reel quantity of 2,000 units in the POWERDI3333-8 case. Confirm compliance requirements such as RoHS and AEC-Q101 qualification directly from the manufacturer's datasheet before procurement.
Selection Notes
Select this component for designs requiring low on-state resistance within a compact footprint. Evaluate thermal dissipation capabilities based on the specific PCB copper area and via configuration used. Ensure the operating junction temperature remains within the -55°C to +150°C range during application.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in the POWERDI3333-8 package, which is designed for high-density surface mount applications. The device is constructed using silicon technology and is intended for general-purpose power switching tasks.
Replacement Considerations
Check the DMN3010LK3-13 for TO-252 packaging or the DMN3010LSS-13 for 8-SOP packaging if different mechanical constraints are required. Verify pinout compatibility and electrical parameters match before substitution.
