DMN3010LSS-13

$0.81

Description：MOSFET N-CH 30V 16A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f30caed4f613 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 16A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2096 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN3010LSS-13

Overview

The DMN3010LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 16 A at 25°C ambient temperature. The device exhibits a low static drain-source on-resistance (R_DS(on)) of 9 mΩ at V_GS = 10 V and I_D = 16 A, or 13 mΩ at V_GS = 4.5 V and I_D = 10 A. Total gate charge (Q_g) is specified as 43.7 nC at V_GS = 10 V. The component operates within an ambient temperature range of -55°C to +150°C junction temperature and dissipates up to 2.5 W of power.

Feature Summary

Low on-resistance for efficient conduction
Fast switching speed capabilities
Qualified to AEC-Q101 standards for high reliability

Applications

Automotive electronic systems requiring high reliability components
Power management circuits utilizing surface mount technology
General purpose switching applications in consumer electronics

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS compliance requirements and utilizes lead-free design specifications. Ensure the SOP-8L package dimensions align with the target PCB footprint layout before finalizing procurement orders.

Selection Notes

Select this component when a 30 V N-channel MOSFET with low on-resistance is required for surface mount applications. Consider the 16 A continuous current rating and 2.5 W power dissipation capability for thermal management planning. Verify compatibility with standard logic levels if driving at lower gate voltages such as 4.5 V.

Part Context

This part belongs to the DMN3010 series of single N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications and offers a compact SOP-8L package suitable for automated surface mount assembly processes. The device is characterized for automotive-grade reliability through AEC-Q101 qualification.

Replacement Considerations

The NVMS4816NR2G from onsemi is listed as a similar replacement option. Verify electrical parameter compatibility including voltage ratings, current handling, and package dimensions before substituting.

FAQ

What is the maximum pulsed drain current for the DMN3010LSS-13?

The maximum pulsed drain current (I_DM) is 64 A, provided the pulse width is less than or equal to 10 microseconds and the duty cycle does not exceed 1%.