DMN3011LFVW-13

$0.14

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e68ef46591d9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN3011LFVW-13

Overview

The DMN3011LFVW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 5 A. Its on-resistance (Rds(on)) is specified at 11 mΩ, with a gate charge (Qg) of 19.7 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 2.6 W.

Feature Summary

Single N-channel enhancement mode configuration for efficient switching control
PowerDI3333-8 surface-mount package designed for compact board space utilization
Silicon-based construction supporting high thermal stability up to 150°C

Applications

DC-DC converter output stages
Load switching circuits
Low-side power management applications

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation, as availability data indicates potential regional sales restrictions or discontinuation status for certain variants. Confirm package type and tape-and-reel specifications directly with the supplier to ensure compatibility with automated assembly processes. Cross-reference the part number with official Diodes Incorporated databases to validate current production status and lead time requirements before finalizing procurement plans.

Selection Notes

Select this component when a low-profile N-channel MOSFET with moderate current handling capabilities is required for space-constrained designs. The 11 mΩ on-resistance offers a balance between conduction losses and cost for 30 V systems. Ensure the application voltage does not exceed the 30 V drain-source rating and that thermal management strategies accommodate the 2.6 W power dissipation limit in the PowerDI3333-8 footprint.

Part Context

This part belongs to the Diodes Incorporated MOSFET product line, specifically categorized under transistors. It is distinct from dual-channel variants like the DMN3012LFG-13 and higher-voltage devices such as the DMTH6016LFVW-13. The PowerDI series represents a family of plastic packages designed to replace traditional metal-can or standard plastic transistor packages in modern surface-mount applications.