DMN3012LFG-13

Overview

The DMN3012LFG-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type D) surface-mount package. The device provides a drain-source voltage rating of 30V and continuous drain currents up to 20A at case temperatures of +25°C. Q1 exhibits a maximum on-resistance of 12mΩ, while Q2 achieves 6mΩ, both measured at VGS = 5V and ID = 15A. Gate-source voltage limits are ±10V. Thermal characteristics include a junction-to-case resistance of 9.5°C/W and a total power dissipation of 2.2W at TC = +25°C. Operating and storage temperature ranges span from -55°C to +150°C.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact package for space-constrained designs.
• Optimized for high-efficiency power management applications through minimized on-state resistance and superior switching performance.
• Manufactured with lead-free finish and complies with RoHS directives, ensuring halogen and antimony-free construction.

Applications

• DC-DC Converters
• Power Management Functions

Procurement Notes

Verify component authenticity upon receipt, as the datasheet explicitly marks this part as not recommended for new design. Confirm that the received units match the specified PowerDI3333-8 (Type D) package dimensions and marking codes. Ensure sourcing channels provide valid traceability documentation to mitigate risks associated with obsolete or discontinued inventory.

Selection Notes

Engineers should prioritize the successor model DMN3012LDG for any new hardware development cycles due to the explicit obsolescence notice in the official documentation. Evaluate thermal constraints carefully, as the 2.2W power dissipation limit requires adequate PCB copper area for heat spreading. Verify gate drive voltages do not exceed the ±10V absolute maximum rating to prevent gate oxide breakdown.

Part Context

This component belongs to the DMN3012 series of synchronous N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type D) plastic molded package designed for efficient thermal transfer. The specific suffix '-13' indicates a tape and reel packaging quantity of 3000 units per reel, distinct from the '-7' variant which contains 1000 units.

Replacement Considerations

The official datasheet recommends using DMN3012LDG as the direct replacement for this component. Designers must verify pin compatibility and electrical parameter alignment before substituting the legacy DMN3012LFG-13 with the suggested DMN3012LDG in existing circuits.

FAQ

What is the maximum gate-source voltage allowed for the DMN3012LFG-13?

The absolute maximum rating for the gate-source voltage (VGSS) is ±10V.

How does the on-resistance differ between the two channels?

Q1 has a maximum RDS(ON) of 12mΩ, whereas Q2 offers a lower maximum RDS(ON) of 6mΩ under identical test conditions.

Is this component suitable for new design implementations?

No, the datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and directs users to use the DMN3012LDG instead.