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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 9.5A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs：14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V
- Power - Max：2.16W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：PowerDI3333-8 (Type D)
- Grade：-
- Qualification：-
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Overview
The DMN3013LDG-13 is a synchronous N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a dual N-channel configuration housed in a PowerDI3333-8 (Type D) surface-mount package. The device supports a drain-source voltage of 30V and delivers a continuous drain current of 15A at a case temperature of +25°C. Key electrical parameters include a maximum on-resistance of 14.3mΩ at VGS=8V and ID=4A, with a gate threshold voltage ranging from 0.75V to 1.2V. Thermal characteristics specify a junction-to-ambient resistance of 58.8°C/W and a total power dissipation of 2.16W at +25°C ambient temperature.
Feature Summary
- Dual N-channel synchronous design optimized for high efficiency power management applications
- Low input capacitance and fast switching speed capabilities
- Manufactured using lead-free finish technology that is RoHS compliant
- Halogen and antimony free construction classified as a Green Device
Applications
- DC-DC Converters
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix when sourcing components. The -13 suffix indicates a tape and reel packaging quantity of 3,000 units. Confirm compliance requirements such as RoHS directives and Halogen-free status against project specifications before procurement. Ensure the supplier provides valid traceability documentation for the manufacturing date code.
Selection Notes
Select this component for circuits requiring low on-state resistance and superior switching performance within a 30V system. Evaluate thermal constraints carefully, as the PowerDI3333-8 package has a relatively high thermal resistance compared to larger packages. Verify that the gate drive voltage meets the minimum requirements for optimal RDS(ON) reduction during operation.
Part Context
This part belongs to the DMN3013 series of synchronous MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology to minimize on-state resistance while maintaining fast switching speeds. The product is designed for modern power management solutions where space efficiency and thermal performance are critical design factors.
Replacement Considerations
Direct replacements must match the 30V rating, dual N-channel configuration, and PowerDI3333-8 footprint. Verify pinout compatibility and ensure equivalent or lower RDS(ON) values to maintain circuit efficiency. Check thermal resistance ratings to prevent overheating in existing board layouts.
