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Product Detailed Parameters
- Description：MOSFET 2N-CH 21A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1184pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8
- Grade：-
- Qualification：-
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Overview
The DMN3016LDV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type UXC) surface-mount package. The device provides a drain-source voltage rating of 30 V and continuous drain currents of 21 A at +25°C case temperature and 17 A at +70°C. Maximum on-resistance is specified as 12 mΩ at VGS = 10V and 17 mΩ at VGS = 4.5V, both tested at ID = 7A. Total gate charge reaches 9.5 nC at VGS = 4.5V and 21 nC at VGS = 10V. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Monolithic integration of two N-channel enhancement mode MOSFETs within a single die
- Minimized on-state resistance combined with superior switching performance for high efficiency power management
- Low input capacitance and low input/output leakage characteristics
- Totally lead-free and fully RoHS compliant construction
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. The '-13' suffix indicates a tape and reel packaging quantity of 3000 units per reel. Confirm that the component meets all required environmental standards and quality certifications applicable to your manufacturing process. Ensure compatibility with standard surface mount assembly equipment.
Selection Notes
Select this component when space-constrained designs require dual N-channel MOSFET functionality in a compact PowerDI3333-8 footprint. Evaluate thermal requirements carefully, as total power dissipation is limited to 0.9 W under steady-state conditions on an FR-4 board. Verify that the 30 V breakdown voltage and current ratings align with the target circuit's operational parameters and load profiles.
Part Context
This part belongs to the DMC/DMN3016 series of dual MOSFETs designed for low-voltage applications. It utilizes Diodes Incorporated's proprietary DIOFET technology to achieve low on-resistance and fast switching speeds. The PowerDI3333-8 package offers a thermally efficient solution that occupies significantly less board area compared to traditional SOIC packages.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching the dual N-channel configuration, 30 V rating, and compatible PowerDI3333-8 package dimensions.
