ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：730mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Download product information
Overview
The DMN3016LFDF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-resistance (RDS(ON)) of 12mΩ at VGS=10V, or 16mΩ at VGS=4.5V. The device supports a continuous drain current (ID) of 10A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a U-DFN2020-6 case with a 0.6mm profile, it is designed for high-efficiency power management applications.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency.
- Features a low gate threshold voltage suitable for logic-level drive applications.
- Compliant with RoHS directives and halogen/antimony-free green manufacturing standards.
Applications
- Battery Management Systems
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the official datasheet. Confirm that the component meets the required JEDEC reliability standards if high-reliability automotive or industrial environments are intended. Ensure the U-DFN2020-6 footprint matches the PCB layout guidelines provided in the mechanical data section.
Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage power switching. The U-DFN2020-6 package offers a small PCB footprint ideal for space-constrained designs. Consider the thermal resistance characteristics and ensure adequate copper area on the PCB to manage power dissipation effectively under steady-state operating conditions.
Part Context
This part belongs to the DMN3016LFDF series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic U-DFN2020-6 case. The product is classified under transistors and is intended for general-purpose power management tasks requiring low on-resistance and fast switching capabilities.
Replacement Considerations
Consult the manufacturer's documentation for equivalent parts such as DMN3016LFDE-7 or DMN3016LFDF-13, which share similar electrical characteristics but differ in packaging quantities. Verify pinout compatibility and thermal performance before substituting.
