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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：730mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMN3016LFDFQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30V and operates within a junction temperature range of -55°C to +150°C. The device offers a typical static drain-source on-resistance (R_DS(ON)) of 8mΩ at V_GS = 10V and 12mΩ at V_GS = 4.5V, supporting continuous drain currents up to 10A at 25°C. Packaged in a U-DFN2020-6 (Type F) case with a 0.6mm profile, it is designed for low-profile applications.
Feature Summary
- Qualified to AEC-Q101 standards and supported by PPAP for automotive application requirements.
- Features a low gate threshold voltage and low on-resistance for efficient power management.
- Housed in a compact U-DFN2020-6 package with a 0.6mm profile and 4mm² PCB footprint.
Applications
- Battery Management Systems
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantities and reel specifications. Ensure that the component meets all required environmental compliance standards, including RoHS and halogen-free definitions, before finalizing procurement decisions for production integration.
Selection Notes
Select this component when designing circuits requiring a 30V N-channel MOSFET with low R_DS(ON) in a space-constrained environment. Consider its AEC-Q101 qualification if the design targets automotive reliability standards. Evaluate thermal performance based on the specified junction-to-ambient resistance values under your specific board layout conditions.
Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type F) plastic molded case. The device is fully lead-free and compliant with EU directives regarding restricted substances, ensuring suitability for modern electronic manufacturing processes.
Replacement Considerations
Consult official manufacturer cross-reference lists or datasheets for verified equivalent parts. Do not substitute without confirming pinout compatibility, electrical parameter limits, and package dimensions match the original design requirements.
