DMN3016LPS-13

$0.63

Description：MOSFET N-CH 30V 10.8A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:559417a5e4bb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 10.8A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.18W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMN3016LPS-13

Overview

The DMN3016LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 10.8A at TA = +25°C with VGS = 10V, and 9.5A at TA = +25°C with VGS = 4.5V. Maximum static drain-source on-resistance (RDS(ON)) is specified as 12mΩ at VGS = 10V and 16mΩ at VGS = 4.5V, both tested at ID = 20A. Total power dissipation (PD) is rated at 1.18W under steady-state conditions on an FR-4 substrate. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Features a package profile of less than 1.1mm, making it suitable for thin application designs.
Qualified to AEC-Q101 standards to ensure high reliability in automotive environments.

Applications

DC-DC Converters
Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony free if environmental compliance is required. Ensure the procurement channel is authorized to avoid counterfeit components. Check for any recent product change notices regarding the PowerDI5060-8 case or marking information before finalizing orders.

Selection Notes

Select this component when a low-profile N-channel MOSFET is required for space-constrained designs. The 30V rating and 10.8A continuous current capability suit general power management tasks. Verify that the 12mΩ RDS(ON) specification at VGS = 10V aligns with the system's drive voltage requirements. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits.

Part Context

This part belongs to the DMN3016 series from Diodes Incorporated, utilizing the PowerDI5060-8 surface mount package. It is a silicon-based N-channel enhancement mode field-effect transistor designed for modern power management circuits. The device integrates a single channel optimized for low conduction losses and fast switching speeds.