DMN3016LSS-13

$0.54

Description：MOSFET N-CH 30V 10.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:09aba8082e81 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 10.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN3016LSS-13

Overview

The DMN3016LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and operates within a temperature range of -55°C to +150°C. The device offers a maximum on-resistance of 12mΩ at VGS=10V and 16mΩ at VGS=4.5V, supporting continuous drain currents of 10.3A and 9.3A respectively. Packaged in an SO-8 case, it provides a total power dissipation of 1.5W with a thermal resistance of 82°C/W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Qualified to AEC-Q101 standards for high reliability automotive environments.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Halogen and antimony free, classified as a 'Green' device.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the SO-8 package with 2500 units per tape and reel configuration. Confirm that the component meets the required AEC-Q101 qualification standards if utilized in automotive contexts. Ensure compliance with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2) requirements during procurement.

Selection Notes

Select this component when low on-resistance and fast switching are critical for power management efficiency. The SO-8 package suits surface mount designs requiring robust thermal characteristics. Evaluate the 30V breakdown voltage against circuit requirements to ensure adequate safety margins under varying load conditions.

Part Context

This part belongs to the DMN3016 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SO-8 plastic case. The product line emphasizes minimizing RDS(on) without compromising switching speed, targeting modern power management solutions.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as V(BR)DSS, RDS(ON), and package dimensions to ensure functional compatibility.