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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.7A
- Rds On (Max) @ Id, Vgs：22mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：697pF @ 15V
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMN3018SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 6.7A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 22mΩ at VGS = 10V and 30mΩ at VGS = 4.5V. Total gate charge (Qg) is 13.2nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 1.5W in steady state.
Feature Summary
- Dual N-channel configuration integrated into a single SO-8 package
- Optimized for low on-state resistance while maintaining superior switching performance
- Rated for 100% unclamped inductive switching (UIS) avalanche capability
- Gate structure includes built-in ESD protection diodes
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the component against the official datasheet DS35583 Rev. 5-2 to confirm authenticity. Ensure the marking code matches 'N3018SD' and the date code format corresponds to YYWW. Confirm RoHS compliance and absence of halogens or antimony as specified in the manufacturer's green product definitions before finalizing procurement.
Selection Notes
Select this component when a compact dual N-channel solution is required for 30V logic-level applications. The SO-8 package provides efficient thermal dissipation for power management tasks. Evaluate the RDS(ON) specifications at both 4.5V and 10V gate drive voltages to ensure compatibility with the specific control circuitry driving the gates.
Part Context
This part belongs to the DMN3018 series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes an SO-8 case constructed from molded plastic with a matte tin annealed finish over a copper leadframe. The device is designed for high reliability and meets AEC-Q101 standards, making it suitable for automotive-grade environments requiring robust switching characteristics.
Replacement Considerations
Direct replacements must match the 30V BVDSS, dual N-channel topology, and SO-8 packaging. Verify that substitute components meet the same 22mΩ RDS(ON) maximum at VGS=10V and maintain equivalent thermal resistance and pinout configurations to ensure seamless integration without PCB redesign.
