DMN3020LK3-13

Description：MOSFET N-CH 30V 11.3A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e9f7fc4076a5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 11.3A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：608 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.17W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN3020LK3-13

Overview

The DMN3020LK3-13 is a discontinued 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 30V and a continuous drain current of 16.7A at 25°C, reducing to 11.3A at 70°C. The device offers a low on-resistance of 20mΩ at VGS=10V and 34mΩ at VGS=4.5V. Packaged in a TO-252 (DPAK) case with a matte tin finish, it supports an operating temperature range from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Constructed using "Green" molding compound that is RoHS compliant and free of halogens or antimony compounds.

Applications

Backlighting
DC-DC Converters
Power management functions

Procurement Notes

This component is officially marked as discontinued by the manufacturer. Verify end-of-life status before design finalization. Confirm availability of alternative sources if immediate procurement is required. Check for product change notifications regarding final manufacturing dates. Ensure replacement strategies are implemented to mitigate supply chain risks associated with obsolete parts.

Selection Notes

Select this part only if the application requires a 30V N-channel MOSFET in a TO-252 package and can accommodate a discontinued component. Evaluate thermal derating requirements carefully, as continuous current drops significantly at elevated temperatures. Consider total gate charge and switching speeds for high-frequency designs. Verify that the lower current rating at 70°C meets system load demands under worst-case thermal conditions.

Part Context

The DMN3020LK3-13 belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices utilize silicon technology and are housed in surface-mountable DPAK packages. The series targets general-purpose power switching and management tasks where moderate voltage ratings and efficient conduction are prioritized.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum pulsed drain current for the DMN3020LK3-13?

The maximum pulsed drain current is 51A, measured under pulsed conditions with a duty cycle of 0.02 and a pulse width of 300 µs.

How does the continuous drain current change with temperature?

The continuous drain current decreases from 16.7A at 25°C to 13.3A at 70°C, and further down to 11.3A when measured under specific PCB mounting conditions.