DMN3020UFDF-7

$0.58

Description：MOSFET N-CH 30V 15A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b1843d91d3e7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：19mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 8 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1304 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.03W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMN3020UFDF-7

Overview

The DMN3020UFDF-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 15A at TC = +25°C. The device offers a low on-state resistance of 19mΩ at VGS = 4.5V and 25mΩ at VGS = 2.5V. It utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile, providing a PCB footprint of 4mm². Total power dissipation reaches 2.03W at TC = +25°C. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features an ultra-low profile construction ideal for space-constrained designs.
Incorporates ESD protection on the gate terminal.
Compliant with RoHS directives and halogen/antimony-free standards.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Ensure that the component meets all applicable environmental compliance requirements relevant to the target market. Confirm that the manufacturing facility adheres to required quality standards if automotive or industrial grade reliability is necessary for the application.

Selection Notes

Select this component when a compact form factor is required alongside low conduction losses. Evaluate thermal management strategies based on the specified power dissipation ratings under various mounting conditions. Consider the gate threshold voltage characteristics to ensure compatibility with the intended logic drive levels in the circuit design.

Part Context

This part belongs to the DMN3020 series of N-channel MOSFETs from Diodes Incorporated. The series focuses on delivering high current capabilities within small footprints suitable for portable electronics and power supply modules. The U-DFN2020-6 package provides robust thermal performance relative to its physical size.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching voltage, current, and package dimensions strictly.