DMN3020UTS-13

$0.48

Description：MOSFET N-CH 30V 15A 8TSSOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ab275ff3014f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A 8TSSOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：20mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 8 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1304 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-TSSOP
Package / Case：8-TSSOP (0.173", 4.40mm Width)

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DMN3020UTS-13

Overview

The DMN3020UTS-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSSOP-8 package with a drain-source voltage (BVDSS) of 30V and a maximum on-resistance (RDS(ON)) of 20mΩ at VGS=4.5V. The device supports a continuous drain current of 15A at TC=+25°C and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Features low gate threshold voltage and an ESD protected gate structure.
Qualified to AEC-Q101 standards for automotive high reliability requirements.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging configuration. Confirm that the component meets RoHS, REACH, and halogen-free environmental compliance standards as specified in the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when a single N-channel MOSFET in a TSSOP-8 package is required for 30V logic-level switching. Ensure thermal design accommodates the 0.85W power dissipation limit on standard FR-4 substrates. Verify that the 15A current rating aligns with the target application's steady-state and pulsed load requirements.

Part Context

This part belongs to the DMN3020 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series includes variants with different packages such as U-DFN2020-6 and PowerDI3333-8. The DMN3020UTS specifically utilizes the TSSOP-8 form factor to provide a balance between thermal performance and board space constraints.

Replacement Considerations

Cross-reference with other Diodes Incorporated parts like DMT3020UFDB-13 or DMN3020UFDF-13 if package changes are acceptable. Verify pinout compatibility and electrical parameter equivalence before substituting with components from other manufacturers.