DMN3022LDG-13

$0.31

Description：MOSFET 2N-CH 30V 7.6A PWRDI3333
Series：-

SKU:0bceac47160b Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 7.6A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs：22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：481pF @ 15V, 996pF @ 15V
Power - Max：1.96W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerLDFN
Supplier Device Package：PowerDI3333-8 (Type D)
Grade：-
Qualification：-

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DMN3022LDG-13

Overview

The DMN3022LDG-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type D) surface-mount package. It features a drain-source voltage rating of 30V and operates within a junction temperature range of -55°C to +150°C. The device integrates two distinct channels: Q1 provides a maximum on-resistance of 22mΩ at VGS=5V and ID=10A with a continuous drain current of 15A, while Q2 offers a lower resistance of 8mΩ under identical conditions with the same current rating. Total power dissipation reaches 1.96W at 25°C ambient temperature.

Feature Summary

Dual synchronous configuration designed for high-efficiency power management applications
Optimized for minimized on-state resistance while maintaining superior switching performance
Manufactured using lead-free, halogen-free, and antimony-free green molding compounds

Applications

DC-DC Converters
Power Management Functions
Analog Switches

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantities and reel specifications. Confirm RoHS compliance status and environmental declarations directly through manufacturer resources before finalizing procurement plans. Ensure component authenticity by sourcing exclusively from authorized distribution channels.

Selection Notes

Evaluate thermal resistance characteristics and safe operating area limits when designing for high-current environments. Compare gate charge requirements against driver capabilities to optimize switching speed and minimize transition losses. Verify that the selected package footprint aligns with PCB layout constraints and soldering process capabilities.

Part Context

This component belongs to the DMN series of synchronous N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series utilizes silicon technology to deliver low on-resistance values suitable for compact power management designs. The PowerDI3333-8 package provides a small form factor with enhanced thermal dissipation properties compared to traditional plastic packages.