DMN3024LK3-13

$0.61

Description：MOSFET N-CH 30V 9.78A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e63edfeb51ba Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 9.78A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9.78A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：608 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.17W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN3024LK3-13

Overview

The DMN3024LK3-13 is a 30V N-channel enhancement mode MOSFET in a TO-252 (DPAK) package. It features a maximum drain-source on-resistance of 24mΩ at VGS=10V and 39mΩ at VGS=4.5V. The device supports a continuous drain current of 14.4A at TA=25°C, with a total gate charge of 12.9nC. Operating temperatures range from -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed capabilities
Low gate drive requirements

Applications

Backlighting
DC-DC Converters
Power management functions

Procurement Notes

Verify the component against official Diodes Incorporated datasheets to confirm electrical parameters and physical dimensions. Ensure compatibility with RoHS standards and check for specific manufacturing lot codes or date code markings if traceability is required for your assembly process.

Selection Notes

Select this component when designing circuits requiring low conduction losses and fast switching within a 30V limit. Consider thermal resistance values based on your PCB copper area and airflow conditions to ensure safe operating junction temperatures under load.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a TO-252 surface-mount package designed for efficient heat dissipation and automated placement in electronic assemblies.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional equivalence.