DMN3024SFG-7

$0.52

Description：MOSFET N-CH 30V 7.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:324a337a10a7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 7.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：479 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3024SFG-7

Overview

The DMN3024SFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of 30V and a gate-source voltage (VGSS) of ±25V. The device offers a maximum on-resistance (RDS(on)) of 23mΩ at VGS=10V and 33mΩ at VGS=4.5V, with continuous drain currents of 7.5A at VGS=10V and 6.3A at VGS=4.5V. Total gate charge is 10.5nC at VGS=10V. It operates within a temperature range of -55°C to +150°C and utilizes the POWERDI3333-8 surface-mount package.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Occupies only 33% of the board area compared to SO-8 packages, enabling smaller end products.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The DMN3024SFG-7 designation corresponds to the 2000-unit tape and reel configuration. Confirm that the component meets all applicable environmental compliance requirements for the intended deployment region. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The POWERDI3333-8 package provides thermal efficiency suitable for high-density layouts. Consider the 30V rating and current capabilities relative to the specific load requirements and operating temperature conditions of the target application circuit.

Part Context

This part belongs to the DMN3024 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in the POWERDI3333-8 package, which is designed to minimize footprint while maintaining thermal performance. The series is engineered to balance low conduction losses with fast switching characteristics for modern power management systems.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage ratings, current handling, and package dimensions.