DMN3025LFV-13

$0.51

Description：MOSFET N-CH 30V 25A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8d43f1e74bd8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 25A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMN3025LFV-13

Overview

The DMN3025LFV-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) surface-mount package. The device features a drain-source breakdown voltage of 30 V and a maximum continuous drain current of 25 A at 25°C case temperature. The static drain-source on-resistance is specified as 18 mΩ max at VGS = 10 V and 30 mΩ max at VGS = 4.5 V. Operating temperatures range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8 packages.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision DS39950 Rev. 2 - 2 matches the delivered product specifications. Ensure compliance with RoHS 2 and REACH directives if required by local regulations. Validate thermal management requirements against the junction-to-ambient thermal resistance values provided in the official documentation.

Selection Notes

Select this component when low on-state losses are critical for system efficiency. The PowerDI3333-8 package offers significant board space reduction compared to traditional SO-8 footprints. Verify that the gate drive voltage meets the minimum threshold for the desired on-resistance level. Consider the thermal dissipation capabilities based on the specific PCB copper layout and ambient operating conditions.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for compact power management designs requiring high current handling within a minimal footprint. The PowerDI packaging technology provides improved thermal performance relative to standard plastic packages of similar size.