DMN3026LVT-7

$0.34

Description：MOSFET N-CH 30V 6.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f9953c538606 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 6.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：643 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-23-6
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN3026LVT-7

Overview

The DMN3026LVT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and a maximum continuous drain current of 6.6A at +25°C. The device exhibits low on-resistance, specified as 23mΩ max at VGS=10V and 30mΩ max at VGS=4.5V. Packaged in a TSOT26 case, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Constructed with a molded plastic green molding compound that is halogen and antimony free.

Applications

DC-DC Converters
Power management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel packaging quantity of 3,000 units. Confirm the package type matches the required TSOT26 form factor. Ensure compliance with RoHS directives if lead-free components are mandated for the assembly process.

Selection Notes

Select this component for circuits requiring a 30V N-channel switch with low conduction losses. The TSOT26 package suits space-constrained designs. Evaluate thermal dissipation requirements against the 1.2W steady-state power rating at +25°C ambient conditions. Consider the gate threshold voltage characteristics for logic level compatibility.

Part Context

This part belongs to the DMN3026LVT series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT26 surface-mount package. The device is designed to balance low on-resistance with fast switching speeds for efficient power control.

Replacement Considerations

The datasheet does not list specific substitute part numbers. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before substituting with other N-channel MOSFETs in the TSOT26 package.