DMN3027LFG-13

$0.22

Description：MOSFET N-CH 30V 5.3A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9150a8f71141 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.3A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：580 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMN3027LFG-13

Overview

The DMN3027LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGSS) rating of ±25 V. The device provides a continuous drain current (ID) of 8.0 A at TA = +25°C with a maximum static drain-source on-resistance (RDS(ON)) of 18.6 mΩ at VGS = 10 V, or 26.5 mΩ at VGS = 4.5 V. Total gate charge (Qg) is 11.3 nC at VGS = 10 V. Power dissipation reaches 2.07 W on a high-coverage FR-4 PCB. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area occupied by SO-8.
Rated for 100% Unclamped Inductive Switching (UIS) and tested for 100% Gate Resistance (Rg).
Qualified to AEC-Q101 standards for high reliability.

Applications

Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration in the POWERDI3333-8 case. Confirm compliance with RoHS directives and Halogen/Antimony-free 'Green' device definitions during procurement. Ensure the component meets the required thermal and electrical specifications for the intended application environment.

Selection Notes

Select this component when a compact, single N-channel MOSFET with low RDS(ON) is required for space-constrained designs. The 30 V rating suits low-voltage power rails. Consider the 8.0 A continuous current capability and 2.07 W power dissipation limits based on the PCB copper coverage. Verify that the 18.6 mΩ on-resistance at 10 V gate drive aligns with the system's efficiency targets.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed for high-efficiency power management. It utilizes the POWERDI3333-8 surface-mount package, which offers a significant reduction in board area compared to traditional SO-8 packages. The device integrates an internal body diode and is optimized for minimizing conduction losses without compromising switching speed.