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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5.3A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.3 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：580 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3027LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the POWERDI®3333-8 surface-mount package and operates with a drain-source voltage of 30V. The device supports continuous drain currents up to 8.0A at 25°C (VGS=10V) or 6.5A at VGS=4.5V, with a maximum on-resistance of 18.6mΩ at 10V gate drive. Key electrical parameters include a gate threshold voltage of 0.9V to 1.8V, total gate charge of 5.3nC at 4.5V, and input capacitance of 580pF. It features an operating temperature range from -55°C to +150°C and is rated for repetitive avalanche energy.
Feature Summary
- Low on-state resistance minimizes conduction losses in power management circuits
- POWERDI®3333-8 package provides high thermal efficiency and reduced board area compared to SO-8
- Rated for 100% unclamped inductive switching (UIS) and tested for gate resistance
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Backlighting systems
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance and halogen-free status requirements match project constraints. Ensure the component meets AEC-Q101 qualification standards if used in automotive applications. Cross-reference datasheet revision numbers to validate current manufacturing parameters.
Selection Notes
Select this component for designs requiring a compact footprint with efficient thermal dissipation. Evaluate the trade-off between low RDS(ON) and gate charge for switching frequency requirements. Consider the 30V breakdown voltage margin relative to system rail voltages. Verify that the 150°C junction temperature rating aligns with the intended ambient operating environment.
Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It is designed as a next-generation solution focusing on minimizing on-state resistance while maintaining superior switching performance. The device is specifically engineered for high-efficiency power management applications where space and thermal constraints are critical.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume pin-compatible replacements without verifying electrical characteristics and package dimensions.
