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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5.3A PWRDI333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.3 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：580 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3029LFG-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and a maximum continuous drain current of 8.0A at 25°C ambient temperature. The device exhibits a low on-state resistance of 18.6mΩ at VGS=10V and 26.5mΩ at VGS=4.5V. Packaged in the POWERDI3333-8 surface-mount format, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state losses
- Small form factor thermally efficient package enabling higher density end products
- Occupies significantly less board area compared to traditional SO-8 packages
- Rated for 100% unclamped inductive switching (UIS) avalanche capability
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify that the ordering suffix matches the required packaging quantity, as the -7 suffix indicates a 2000-unit tape and reel configuration. Confirm compliance requirements such as RoHS and AEC-Q101 qualification against specific project standards. Ensure the requested part number corresponds exactly to the DMN3029LFG-7 designation to avoid substitution errors.
Selection Notes
Select this component when a compact N-channel MOSFET with low RDS(on) is required for space-constrained designs. The device offers superior switching performance suitable for high-efficiency power management. Consider the thermal characteristics and PCB copper coverage requirements to ensure adequate heat dissipation within the specified operating temperature range.
Part Context
This component belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the POWERDI3333-8 package, which provides a small footprint with improved thermal performance. The series is designed to balance low conduction losses with fast switching speeds for modern electronic applications.
Replacement Considerations
Direct substitutes include other single N-channel MOSFETs in the POWERDI3333-8 package with similar voltage and current ratings. Verify pinout compatibility and electrical parameters such as RDS(on) and gate charge before implementation.
