DMN3030LFG-13

Description：DMN3030LFG-13
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:6c245a4e1b31 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：DMN3030LFG-13
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.4 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：751 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3030LFG-13

Overview

The DMN3030LFG-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±25V. The device offers a maximum on-resistance (RDS(ON)) of 18mΩ at VGS=10V and 27mΩ at VGS=4.5V. Continuous drain current reaches 8.6A at TA=+25°C with thermal vias. Total gate charge is 9nC at VGS=4.5V and 17.4nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8 packages.
Qualified to JEDEC standards for high reliability, suitable for demanding environments.

Applications

Backlighting
DC-DC converters
Power management functions

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet revision DS35499 Rev. 6-3 matches procurement documents. Check for AEC-Q101 qualification requirements if automotive grade parts are needed, as this specific part number does not carry the Q-suffix. Ensure compliance with RoHS and halogen-free specifications during assembly.

Selection Notes

Select this component when low RDS(ON) and compact footprint are critical. Suitable for designs requiring 30V breakdown and up to 8.6A continuous current with proper PCB thermal design. Consider the PowerDI3333-8 package for space-constrained layouts. Evaluate thermal resistance values based on actual copper plane and via configurations used in the target application.

Part Context

This MOSFET belongs to Diodes Incorporated's new generation series designed for high-efficiency power management. It utilizes silicon technology within a molded plastic Green molding compound package. The device is lead-free, RoHS compliant, and halogen/antimony free. It is marked with 'NOT RECOMMENDED FOR NEW DESIGN' in some contexts, suggesting potential obsolescence or replacement by newer variants like the DMN3025LFV.

Replacement Considerations

The datasheet explicitly recommends using DMN3025LFV as a replacement. Verify electrical compatibility and pinout alignment before substitution. No other public substitute part numbers are confirmed in the provided documentation.

FAQ

Is the DMN3030LFG-13 qualified for automotive applications?

No, this specific part is not qualified to AEC-Q100/101/104/200 standards. For automotive applications requiring specific change control and IATF 16949 manufacturing, refer to the related automotive grade parts with the Q-suffix.