ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 5.3A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.4 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：751 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMN3030LFG-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 surface-mount packaging and operates with a drain-source voltage of 30 V. The device supports a continuous drain current of 9 A and maintains a maximum on-resistance of 18 mΩ at a gate-source voltage of 10 V. It features a gate threshold voltage of 2.1 V, a total gate charge of 16.7 nC, and a power dissipation rating of 2.5 W. The component functions within an ambient temperature range of -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs in a single compact package for space-constrained designs.
- Low on-resistance characteristics optimized for efficient power management and minimal conduction losses.
- Qualified to AEC-Q101 standards to ensure high reliability and robust performance in demanding automotive environments.
Applications
- Automotive infotainment systems requiring reliable power switching components.
- High-reliability industrial control circuits utilizing low-voltage logic interfaces.
- Battery protection modules within electric vehicle subsystems.
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact reel quantities and tape specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the selected variant matches the required AEC-Q101 qualification level for your target application environment. Cross-reference datasheet revision numbers to validate electrical parameter consistency.
Selection Notes
Select this component when dual-channel isolation is required within a restricted footprint. The 30 V rating suits low-voltage DC bus applications. Evaluate thermal management requirements based on the 2.5 W dissipation limit in the PowerDI3333-8 package. Consider the 18 mΩ on-resistance for efficiency targets under 10 V drive conditions.
Part Context
This part belongs to the DMN3030 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the PowerDI3333-8 form factor with other devices in the family but differs in channel count and specific electrical ratings. The series is designed to replace discrete solutions in modern electronics where board space is limited.
Replacement Considerations
Direct substitutes include DMN3030LFG-13 and DMN3030LFG. Verify pinout compatibility and electrical parameters before substitution. Other dual N-channel MOSFETs in similar packages may require circuit redesign due to differing Rds(on) or capacitance values.
