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Product Detailed Parameters
- Description：MOSFET N-CH 30V 9A 8SOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：741 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMN3030LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 9A at 25°C. The device offers a low on-resistance of 18mΩ at VGS=10V and 30mΩ at VGS=4.5V. Total gate charge is 16.7nC at VGS=10V. It operates within a temperature range of -55°C to +150°C and is housed in an SO-8 surface-mount package.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free, halogen-free, and antimony-free green device
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS31261 Rev. 13. Confirm the SO-8 package type and ensure the ordering suffix matches the specified tape and reel packaging configuration. Validate that the part meets RoHS and REACH compliance requirements as defined by the manufacturer's environmental standards.
Selection Notes
Select this component for applications requiring low conduction losses and fast switching performance. The low gate threshold voltage allows compatibility with microcontroller logic levels. Ensure thermal management aligns with the specified junction-to-ambient thermal resistance values for the intended copper pad layout.
Part Context
This part belongs to the DMN3030 series of single N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching characteristics suitable for compact power management designs.
Replacement Considerations
Consult the manufacturer's documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters and package dimensions to ensure functional equivalence.
