DMN3032L-13

Overview

The DMN3032L-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 5.4A at +25°C, with a pulsed drain current (IDM) capability of 30A. Static drain-source on-resistance (RDS(ON)) is specified as a maximum of 31mΩ at VGS = 10V and 45mΩ at VGS = 4.5V. Power dissipation reaches 1.3W under specific thermal conditions, supported by a junction-to-ambient thermal resistance of 93°C/W.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
• Features low input capacitance and fast switching speed characteristics.
• Exhibits low input and output leakage currents.
• Totally lead-free and fully RoHS compliant, containing no intentionally added lead.

Applications

• Battery charging systems
• Power-management functions
• DC-DC converters
• Portable power adaptors

Procurement Notes

Verify the component against official datasheet DS44961 Rev. 2 specifications before integration. Confirm that the SOT23 package variant matches your PCB footprint requirements. Ensure environmental compliance aligns with project standards regarding halogen and antimony content. Validate thermal management capabilities based on the specific board layout and copper area available for heat dissipation during operation.

Selection Notes

Select this component when a compact single N-channel solution is required for 30V applications. The low RDS(ON) values support efficient power handling in portable devices. Consider the SOT23 package size constraints and the 5.4A continuous current limit. Evaluate the thermal resistance parameters against your system's ambient temperature and cooling strategy to ensure reliable operation within the -55°C to +150°C range.

Part Context

This part belongs to the DMN3032L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology housed in an SOT23 surface-mount package. The device is designed for general-purpose switching applications where space efficiency and low conduction losses are critical design factors.

Replacement Considerations

Consult the manufacturer for qualified automotive-grade alternatives if AEC-Q101 certification is required. Verify pinout compatibility and electrical parameter overlaps before substituting with other single N-channel MOSFETs in the same voltage class.

FAQ

What is the maximum pulsed drain current for the DMN3032L?

The maximum pulsed drain current (IDM) is 30A, measured with a pulse width of 10μs and a duty cycle of 1%.

How does the on-resistance vary with gate voltage?

The static drain-source on-resistance (RDS(ON)) is maximized at 31mΩ when VGS is 10V, and increases to a maximum of 45mΩ when VGS is reduced to 4.5V.

Is the DMN3032L suitable for automotive applications?

Standard versions are not explicitly qualified for automotive use. For applications requiring AEC-Q100/101/104/200 qualification and PPAP capability, contact Diodes Incorporated directly.