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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：31mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：481 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3032L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 5.4A at +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 31mΩ at VGS = 10V and 45mΩ at VGS = 4.5V. It is housed in a SOT23 package with a power dissipation rating of 0.8W to 1.3W depending on thermal conditions, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features low input capacitance and fast switching speed characteristics.
- Compliant with RoHS directives and halogen-free standards.
Applications
- Battery charging
- Power-management functions
- DC-DC converters
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable environmental compliance requirements relevant to the target market. Ensure the selected part number matches the required package style and electrical specifications for the intended circuit design before finalizing procurement.
Selection Notes
Select this component based on its 30V breakdown voltage and low RDS(ON) values suitable for efficient power management. Consider the thermal resistance and power dissipation limits when designing heat dissipation strategies. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with the driving logic levels and switching frequency requirements of the application.
Part Context
This component belongs to the DMN3032L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose switching and power management tasks where low on-resistance and fast switching are critical. The product utilizes silicon technology and is available in surface-mount packages for automated assembly processes.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure equivalent electrical parameters and package dimensions match the original design requirements.
