DMN3032LFDB-13

$0.11

Description：MOSFET 2N-CH 30V 6.2A 6UDFN
Series：-

SKU:89bf72a85640 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.2A
Rds On (Max) @ Id, Vgs：30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V
Power - Max：1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：-
Qualification：-

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DMN3032LFDB-13

Overview

The DMN3032LFDB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type B) surface-mount package with a maximum drain-source voltage of 30V and a continuous drain current of 6.2A at +25°C. The device exhibits a maximum on-resistance of 30mΩ at VGS=10V and 42mΩ at VGS=4.5V. Total gate charge is specified as 10.6nC at VGS=10V and 5.0nC at VGS=4.5V. Operating temperature ranges from -55°C to +150°C, with thermal resistance values of 127°C/W and 72°C/W depending on board copper area.

Feature Summary

Dual N-channel configuration designed for high-efficiency power management applications
Low on-state resistance combined with fast switching speed characteristics
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free green device formulation

Applications

Body control electronics systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity. The -13 suffix indicates a tape and reel quantity of 10,000 units, whereas other suffixes may denote different quantities such as 3,000 units. Confirm mechanical case details and moisture sensitivity levels prior to procurement to ensure compatibility with assembly processes.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power switching. Evaluate thermal performance based on the specific PCB copper area available, as thermal resistance varies significantly between minimum pad layouts and larger heat dissipation areas. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the DMN3032LFDB series of dual N-channel enhancement mode MOSFETs. It shares the same electrical specifications and package type as the DMN3032LFDB-7 variant, differing only in the standard tape and reel packaging quantity provided by the manufacturer.