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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.2A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.2A
- Rds On (Max) @ Id, Vgs：30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN3032LFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type B) surface-mount package. The device provides a drain-source breakdown voltage of 30V and supports a continuous drain current of 6.2A at +25°C. The maximum on-resistance is specified as 30mΩ at VGS=10V and 42mΩ at VGS=4.5V. Total gate charge is 10.6nC at VGS=10V. Thermal resistance from junction to ambient is 127°C/W under steady-state conditions on an FR-4 substrate.
Feature Summary
- Dual configuration designed for high-efficiency power management applications
- Optimized for low on-state resistance while maintaining fast switching performance
- Compliant with RoHS directives and halogen-free manufacturing standards
Applications
- Body control electronics systems
- General power management functions
- DC-DC converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation, as it dictates packaging quantity and reel specifications. Confirm that the required automotive or industrial reliability standards are met by this standard grade part rather than the Q-suffix variant. Ensure procurement channels provide traceability for the U-DFN2020-6 case type.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching. Evaluate thermal constraints based on the 127°C/W junction-to-ambient resistance rating. Compare total gate charge values against driver capabilities to ensure adequate switching speed in the target circuit topology.
Part Context
This component belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology within a molded plastic green molding compound case. The product line targets miniaturized designs requiring multiple independent channel controls within a single footprint.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade part DMN3032LFDBQ. Verify pinout compatibility and electrical parameters before substituting with other dual N-channel devices.
