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The DMN3032LFDBQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 6.2A at +25°C. The maximum on-resistance (RDS(ON)) is 30mΩ at VGS=10V and 42mΩ at VGS=4.5V. Total gate charge (Qg) is 10.6nC at VGS=10V. Power dissipation reaches 1.7W with a thermal resistance (RθJA) of 72°C/W on an FR-4 board. Operating temperature range spans -55°C to +150°C.
Verify the specific ordering suffix '-13' against official documentation to confirm the 10,000-unit tape and reel packaging format. Ensure that the component meets all required automotive quality standards and PPAP capabilities as specified by the manufacturer for intended deployment.
Select this component when a dual N-channel configuration is required within a compact U-DFN2020-6 footprint. Consider its low RDS(ON) characteristics for minimizing conduction losses in power management circuits. Verify compatibility with standard gate drive voltages of 4.5V or 10V based on the specific application load requirements.
This device belongs to the DMN3032LFDBQ series manufactured by Diodes Incorporated. It is specifically engineered for automotive applications requiring high reliability and small form factors. The product line supports various packaging options including 3,000-unit reels, catering to different production volume needs.
Consult the official datasheet for confirmed substitute part numbers. Cross-reference electrical parameters such as VDS, ID, and RDS(ON) to ensure functional equivalence before implementing any alternative components in existing designs.