DMN3032LFDBQ-13

DMN3032LFDBQ-13

$0.14
  • Description:MOSFET 2N-CH 30V 6.2A 6UDFN
  • Series:-

SKU:21a7a025ac3b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 6.2A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
  • Rds On (Max) @ Id, Vgs:30mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:500pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UDFN Exposed Pad
  • Supplier Device Package:U-DFN2020-6 (Type B)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMN3032LFDBQ-13

Overview

The DMN3032LFDBQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 6.2A at +25°C. The maximum on-resistance (RDS(ON)) is 30mΩ at VGS=10V and 42mΩ at VGS=4.5V. Total gate charge (Qg) is 10.6nC at VGS=10V. Power dissipation reaches 1.7W with a thermal resistance (RθJA) of 72°C/W on an FR-4 board. Operating temperature range spans -55°C to +150°C.

Feature Summary

  • Qualified to AEC-Q101 standards for automotive reliability
  • Supports PPAP requirements for high-volume manufacturing
  • Ensures robust performance through 100% unclamped inductive switching validation

Applications

  • Body control electronics
  • Power management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' against official documentation to confirm the 10,000-unit tape and reel packaging format. Ensure that the component meets all required automotive quality standards and PPAP capabilities as specified by the manufacturer for intended deployment.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact U-DFN2020-6 footprint. Consider its low RDS(ON) characteristics for minimizing conduction losses in power management circuits. Verify compatibility with standard gate drive voltages of 4.5V or 10V based on the specific application load requirements.

Part Context

This device belongs to the DMN3032LFDBQ series manufactured by Diodes Incorporated. It is specifically engineered for automotive applications requiring high reliability and small form factors. The product line supports various packaging options including 3,000-unit reels, catering to different production volume needs.

Replacement Considerations

Consult the official datasheet for confirmed substitute part numbers. Cross-reference electrical parameters such as VDS, ID, and RDS(ON) to ensure functional equivalence before implementing any alternative components in existing designs.

DMN3032LFDBQ-13DMN3032LFDBQ-13
$0.14
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