DMN3032LFDBWQ-13

$0.21

Description：MOSFET 2N-CH 30V 5.5A 6UDFN
Series：-

SKU:2c410f6e3df1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
Rds On (Max) @ Id, Vgs：30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V
Power - Max：820mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (SWP) Type B
Grade：Automotive
Qualification：AEC-Q101

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DMN3032LFDBWQ-13

Overview

The DMN3032LFDBWQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a U-DFN2020-6 (SWP) Type B package with sidewall plating. The device supports a drain-source voltage of 30V and offers low on-resistance, rated at a maximum of 30mΩ at VGS=10V and 42mΩ at VGS=4.5V. Continuous drain current reaches 5.5A at TA=+25°C. Total gate charge is 10.6nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and is AEC-Q101 qualified.

Feature Summary

Dual N-channel configuration in a small form factor low-profile package
Qualified to AEC-Q101 standards with PPAP capability for automotive use
100% unclamped inductive switching tested for reliability
Sidewall plated terminals for improved optical inspection

Applications

Body Control Electronics
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets the required IATF 16949 manufacturing facility standards for automotive change control. Ensure the U-DFN2020-6 footprint matches the PCB layout guidelines provided in the datasheet.

Selection Notes

Select this component when a dual N-channel MOSFET is required for space-constrained automotive designs. The U-DFN2020-6 package provides increased power density compared to larger packages. Verify that the 30V breakdown voltage and 5.5A continuous current ratings align with the circuit's operational requirements and thermal dissipation capabilities.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other members of the family but utilizes the specific U-DFN2020-6 (SWP) Type B case. The 'WQ' designation indicates its qualification for automotive applications requiring strict change control protocols.