DMN3032LFDBWQ-7

$0.25

Description：MOSFET 2N-CH 30V 5.5A 6UDFN
Series：-

SKU:931306ab0ecc Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
Rds On (Max) @ Id, Vgs：30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V
Power - Max：820mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (SWP) Type B
Grade：Automotive
Qualification：AEC-Q101

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DMN3032LFDBWQ-7

Overview

The DMN3032LFDBWQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a U-DFN2020-6 (SWP) Type B package with sidewall plating. The device is qualified to AEC-Q101 and supports PPAP requirements. Key electrical parameters include a drain-source voltage of 30V, a maximum continuous drain current of 5.5A at 25°C, and a static drain-source on-resistance of 30mΩ at VGS=10V. Total gate charge is 10.6nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

100% unclamped inductive switching capability ensures robust application reliability.
Low on-resistance minimizes power losses during conduction.
Low gate charge reduces switching losses for improved efficiency.
Small form factor low-profile package increases power density.

Applications

Body Control Electronics
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP support, before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring dual N-channel MOSFETs in a compact U-DFN2020-6 footprint. Ensure the design accommodates the specified thermal resistance values and operates within the defined junction temperature limits for optimal performance.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 (SWP) Type B case. The device is specifically engineered to meet stringent automotive industry requirements.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not assume compatibility based solely on pinout or generic electrical ratings without verifying package dimensions and thermal characteristics.