DMN3032LQ-13

$0.06

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2df8faa1aeae Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：31mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：481 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3032LQ-13

Overview

The DMN3032LQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum on-resistance (RDS(ON)) of 31mΩ at VGS=10V and 45mΩ at VGS=4.5V. Continuous drain current reaches 5.4A at +25°C, with a pulsed current capability of 30A. Power dissipation is rated at 0.8W to 1.3W depending on thermal conditions. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Designed for low input capacitance and fast switching speeds.
Compliant with RoHS directives and halogen/antimony-free green manufacturing standards.
Manufactured in IATF 16949 certified facilities.

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration as defined in the manufacturer's documentation. Confirm that the component meets the required automotive quality standards if deployed in vehicle systems. Ensure compatibility with the SOT23 package dimensions during PCB layout design. Validate that the selected part number matches the exact electrical specifications required for the target application environment.

Selection Notes

Select this component when a 30V N-channel MOSFET with low on-resistance is required for space-constrained designs utilizing the SOT23 package. Consider its suitability for automotive environments due to AEC-Q101 qualification. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the final assembly. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.

Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is engineered specifically to address the stringent requirements of automotive electronics. The product line emphasizes high reliability and compliance with international environmental and safety standards for electronic components used in critical systems.