DMN3033LSDQ-13

$0.78

Description：MOSFET 2N-CH 30V 6.9A 8SO
Series：-

SKU:c1fab071ad34 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6.9A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.9A
Rds On (Max) @ Id, Vgs：20mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：725pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMN3033LSDQ-13

Overview

The DMN3033LSDQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a drain-source voltage (BVDSS) of 30V, a continuous drain current (ID) of 6.9A at +25°C, and a maximum static drain-source on-resistance (RDS(ON)) of 20mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 2W.

Feature Summary

Dual N-channel configuration in a single compact SO-8 package
Qualified for automotive applications under AEC-Q101 standards
Low on-resistance and low gate threshold voltage for efficient switching
Totally lead-free and fully RoHS compliant

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS37965 Rev. 3-2. Confirm that the marking code matches 'N3033LD' and the date code format corresponds to YYWW. Ensure the package type is strictly SO-8 and the part number suffix '-13' indicates tape and reel packaging containing 2,500 units per reel.

Selection Notes

Select this component when a dual N-channel MOSFET is required for automotive-grade designs. The 30V rating and 6.9A current capacity suit low-voltage power distribution tasks. Verify thermal requirements against the 62.5°C/W junction-to-ambient resistance value for your specific PCB layout conditions.

Part Context

This part belongs to the DMN3033 series from Diodes Incorporated. It is specifically designed to meet stringent automotive requirements, supported by PPAP documentation. The manufacturing occurs in IATF 16949 certified facilities, ensuring consistent quality for high-reliability electronic assemblies.