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Product Detailed Parameters
- Description：MOSFET N-CH 30V 6A SC59
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：755 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3033LSNQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 6A at +25°C. The device exhibits a low on-resistance of 30mΩ at VGS=10V and 40mΩ at VGS=4.5V. Total gate charge is 10.5nC, with a power dissipation capability of 1.4W. It operates within a temperature range of -55°C to +150°C and is housed in an SC-59 package.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching characteristics
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free and fully RoHS compliant
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive applications. Ensure the SC-59 package dimensions align with the target PCB footprint layout before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring a 30V N-channel switch with low conduction losses. The SC-59 package suits space-constrained designs. Verify thermal management capabilities against the 1.4W power dissipation limit and 90°C/W junction-to-ambient resistance. Consider the 10.5nC gate charge for driving circuit compatibility.
Part Context
This part belongs to the DMN3033 series of small-signal enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications. The device is available in surface-mount configurations suitable for automated assembly processes.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as BVDSS, ID, and RDS(on). Package compatibility must be confirmed for direct replacement scenarios.
